SIC MOSFET
SIC MOSFET SIC DIODE HV SJ MOS MV MOSFET

SIC MOSFET

The e SiC MOSFET is an advanced Faster Semiconductor’s silicon carbide MOSFET family.
This technology includes extremely low switching losses, low FOM [QG x RDS(ON)], no reverse recovery losses of body diode and high ruggedness.
For sure, the e SiC MOSFET provides design flexibility for high system efficiency, higher switching frequency for system size reduction with higher reliability.
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Key Features

Extremely low switching losses Low FOM ; QG x RDS(ON) Fast intrinsic diode Robust Avalanche Capability Pb-free, Halogen Free, and RoHS Compliant
Product
Data Sheet
Product Status
Qualification
Package Type
Technology
VDS Max
RDS(on) Typ
VGS(th) Max
ID @25℃ Max
QG(tot)
Output Capacitance
Maximum Junction Temperature
Mounting
Feature
FCZN120N31M2 Active Industrial TO247-4L Notch eSiC M2 1200 V 31 mΩ 4.5 V 90.0 A 111 nC 170 pF 175 ℃ Through Hole High Performance
FCR120N40M2A Active Automotive TSPAK-LF eSiC M2 1200V 40 mΩ 4.5 V 57 A 62 nC 105 pF 175°C Surface Mount High Performance
FCRZ120N40M2A Active Automotive TSPAK-DBC eSiC M2 1200V 40 mΩ 4.5 V 57.0 A 62 nC 105 pF 175°C Surface Mount High Performance
FCZ120N16M2 Active Industrial TO247 4L eSiC M2 1200 V 16 mΩ 4.5 V 118 A 152 nC 227 pF 175 ℃ Through Hole High Performance
FCT65N27M1 Active Industrial TOLL eSiC M1 650 V 27 mΩ 4.5 V 84 A 91 nC 207 pF 175 ℃ Surface Mount High Performance
FCZ65N45M1 Active Industrial TO247 4L eSiC M1 650 V 45 mΩ 4.5 V 44 A 56 nC 131 pF 175 ℃ Through Hole High Performance
FCW65N45M1 Active Industrial TO247 3L eSiC M1 650 V 45 mΩ 4.5 V 44 A 56 nC 131 pF 175 ℃ Through Hole High Performance
FCZ65N27M1 Active Industrial TO247 4L eSiC M1 650 V 27 mΩ 4.5 V 75 A 91 nC 207 pF 175 ℃ Through Hole High Performance
FCW65N27M1 Active Industrial TO247 3L eSiC M1 650 V 27 mΩ 4.5 V 75 A 91 nC 207 pF 175 ℃ Through Hole High Performance
FCBF120N80M1A Active Automotive D2PAK 7L eSiC M1 1200 V 80 mΩ 4.5 V 30 A 50 nC 64 pF 175 ℃ Surface Mount High Performance
FCZ120N80M1A Active Automotive TO247 4L eSiC M1 1200 V 80 mΩ 4.5 V 30 A 52 nC 64 pF 175 ℃ Through Hole High Performance
FCBF120N80M1 Active Industrial D2PAK 7L eSiC M1 1200 V 80 mΩ 4.5 V 30 A 50 nC 64 pF 175 ℃ Surface Mount High Performance
FCZ120N80M1 Active Industrial TO247 4L eSiC M1 1200 V 80 mΩ 4.5 V 30 A 52 nC 64 pF 175 ℃ Through Hole High Performance
FCW120N80M1 Active Industrial TO247 3L eSiC M1 1200 V 80 mΩ 4.5 V 30 A 50 nC 64 pF 175 ℃ Through Hole High Performance
FCZ120N40M1 Active Industrial TO247 4L eSiC M1 1200 V 40 mΩ 4.5 V 60 A 104 nC 124 pF 175 ℃ Through Hole High Performance
FCW120N40M1 Active Industrial TO247 3L eSiC M1 1200 V 40 mΩ 4.5 V 60 A 108 nC 124 pF 175 ℃ Through Hole High Performance
FCZ120N21M1 Active Industrial TO247 4L eSiC M1 1200 V 21 mΩ 4.5 V 100 A 198 nC 224 pF 175 ℃ Through Hole High Performance
FCW120N21M1 Active Industrial TO247 3L eSiC M1 1200 V 21 mΩ 4.5 V 100 A 200 nC 224 pF 175 ℃ Through Hole High Performance
FCZ120N40M2 Active Industrial TO247 4L eSiC M2 1200 V 40 mΩ 4.5 V 57 A 62 nC 105 pF 175 ℃ Through Hole High Performance

SiC MOSFET _ Product Ordering