MV MOSFET
SIC MOSFET SIC DIODE HV SJ MOS MV MOSFET

MV MOSFET

The eMOS G1 is a Faster Semiconductor’s medium voltage (MV) MOSFET family .
This technology is optimized for high current capability and high ruggedness such as avalanche and dynamic dv/dt. With a breakdown voltage ranging from 150V to 300V, eMOS is ideal for various applications requiring performance and ruggedness.
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Key Features

Reduced switching and conduction losses Enhanced body diode dv/dt and di/dt capability Robust avalanche capability 100% avalanche tested Pb-free, Halogen free, and RoHS compliant
Product
Data Sheet
Product Status
Qualification
Package Type
Technology
VdsMax
RDS(on) Typ
VGS(th) Max
ID @25℃ Max
QG(tot)
Mounting
FSO20N9P7G1 Active Industrial Die eMOS G1 200 V 9.7 mΩ 5.0 V 130 A 223 nC Surface Mount
FSW20N9P7G1 Active Industrial TO247-3L eMOS G1 200 V 9.7 mΩ 5.0 V 130 A 223 nC Through Hole

MV MOSFET_ Product Ordering